Reflectivity in Bragg Mirrors of AlGaAsSb/AlAsSb on InP

Dari de Oliveira Toginho Filho, Ivan Frederico Lupiano Dias, José Leonil Duarte, Sidney Alves Lourenço, Luiz Carlos Poças, Edson Laureto, Bernard Nabet, Jean C. Harmand

Abstract


The reflectivity of a Bragg mirror composed by materials of the antimony family (AlGaAsSb/AlAsSb), doped with tellurium, is analyzed in this work. The sample was prepared by molecular beam epitaxy (MBE) and the reflectivity was measured by Fourier Transform Infra-Red Spectroscopy (FTIR). In order to discuss the Bragg mirror properties, the experimental reflectivity is compared to a simulation of the reflectivity based on the matrix formalism.


Keywords


Semiconductors; Reflectance; Bragg mirror; AlGaAsSb, AlAsSb.



DOI: http://dx.doi.org/10.5433/1679-0375.2003v24n1p69

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Semin., Ciênc. Exatas Tecnol.
Londrina - PR - Brazil
E-ISSN: 16790375
DOI: 10.5433/1679-0375
Email: seminaexatas@uel.br
 
This journal is licensed with a license Creative Commons Attribution-NonCommercial 4.0 International.