Photoluminescence of ingaas/inp grown by molecular beam epitaxy

Photoluminescence of ingaas/inp grown by molecular beam epitaxy

Authors

  • Luiz Carlos Poças Universidade Estadual de Londrina
  • Élder Mantovani Lopes Universidade Estadual de Londrina
  • José Leonil Duarte Universidade Estadual de Londrina
  • Ivan Frederico Lupiano Dias Universidade Estadual de Londrina
  • Edson Laureto Universidade Estadual de Londrina
  • Dari Oliveira Toginho Filho Universidade Estadual de Londrina
  • Paulo Sérgio Soares Guimarães Universidade Federal de Minas Gerais
  • Luiz Alberto Cury Universidade Federal de Minas Gerais
  • Harmand Jean Christophe Laboratoire de Photonique et de Nanostructures - France

DOI:

https://doi.org/10.5433/1679-0375.2004v25n2p183

Keywords:

InGaAs/InP, Photoluminescence.

Abstract

Photoluminescence (PL) measurements due to temperature and excitation power were carried out in as function of sample containing a In0,53Ga0,47. As layer, grown by Molecular Beam Epitaxy on an InP substrate. The origins of the several luminescence processes observed at low temperature were determined by studying their different behaviors with increasing temperature and excitation power and by comparing the results with the data found in the literature. The following transitions have been identified: one transition involving localized excitons and two transitions involving acceptor impurities. A review of the main works published in the literature related to the optical transitions observed at low temperature in InGaAs/InP is also presented.

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Author Biographies

Luiz Carlos Poças, Universidade Estadual de Londrina

Departamento de Física – CCE – UEL – Londrina/PR.

Élder Mantovani Lopes, Universidade Estadual de Londrina

Departamento de Física – CCE – UEL – Londrina/PR.

José Leonil Duarte, Universidade Estadual de Londrina

Departamento de Física – CCE – UEL – Londrina/PR.

Ivan Frederico Lupiano Dias, Universidade Estadual de Londrina

Departamento de Física – CCE – UEL – Londrina/PR.

Edson Laureto, Universidade Estadual de Londrina

Departamento de Física – CCE – UEL – Londrina/PR.

Dari Oliveira Toginho Filho, Universidade Estadual de Londrina

Departamento de Física – CCE – UEL – Londrina/PR.

Paulo Sérgio Soares Guimarães, Universidade Federal de Minas Gerais

Departamento de Física – ICEx – UFMG, Belo Horizonte/MG.

Luiz Alberto Cury, Universidade Federal de Minas Gerais

Departamento de Física – ICEx – UFMG, Belo Horizonte/MG.

Harmand Jean Christophe, Laboratoire de Photonique et de Nanostructures - France

Laboratoire de Photonique et de Nanostructures, CNRS, Marcoussis, France.

Published

2004-12-15

How to Cite

Poças, L. C., Lopes, Élder M., Duarte, J. L., Dias, I. F. L., Laureto, E., Toginho Filho, D. O., Guimarães, P. S. S., Cury, L. A., & Christophe, H. J. (2004). Photoluminescence of ingaas/inp grown by molecular beam epitaxy. Semina: Ciências Exatas E Tecnológicas, 25(2), 183–196. https://doi.org/10.5433/1679-0375.2004v25n2p183

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Original Article

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